Metal-Insulator Transition in ALD VO2Ultrathin Films and Nanoparticles: Morphological Control-Reference-Cited by-同舟云学术

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Metal-Insulator Transition in ALD VO2Ultrathin Films and Nanoparticles: Morphological Control

Published:2014-12-15 Issue:5 Volume:25 Page:679-686
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Peter Antony P.¹,Martens Koen¹²,Rampelberg Geert³,Toeller Michael¹⁴,Ablett James M.⁵,Meersschaut Johan¹,Cuypers Daniel¹,Franquet Alexis¹,Detavernier Christophe³,Rueff Jean-Pascal⁵,Schaekers Marc¹,Van Elshocht Sven¹,Jurczak Malgorzata¹,Adelmann Christoph¹,Radu Iuliana P.¹

Affiliation:

1. Imec; B-3001 Leuven Belgium

2. Department of Electrical Engineering (ESAT); KU Leuven; B-3001 Leuven Belgium

3. Department of Solid State Science; CoCooN, Universiteit Gent; B-9000 Gent Belgium

4. Tokyo Electron America, Inc.; Austin Texas 78741 USA

5. Synchrotron SOLEIL; 91192 Gif-sur-Yvette France

Funder

FWO fellowship

Marie Curie Reintegration Grant

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference61 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory

3. Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing

4. The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance

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