Surface Oxidation State Variations and Insulator–Metal Transition Modulations in Vanadium Oxides with Pulsed Hydrogen Plasma

Author:

Zhang Lepeng1,Niu Linkui1,Yang Wanli2,Huang Tiantian3,Zhang Rui3,Xu Peiran3,Liu Feng4,Chen Zhimin1,Chen Xin23ORCID,Dai Ning23

Affiliation:

1. College of Materials Science and Engineering Zhengzhou University Zhengzhou 450052 P. R. China

2. Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou 310024 P. R. China

3. State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 P. R. China

4. Instrumental Analysis & Research Center Dalian University of Technology Panjin 124221 P. R. China

Abstract

AbstractSurface often determines the formation and function of nanoscale thin films and nanomaterials. In correlated vanadium oxides, oxidation states and stoichiometry play important roles in regulating reversible insulator–metal transition (IMT) behaviors. This study presents the surface oxidation state reductions and IMT modulations in vanadium oxides. Oxidation states of vanadium in the surface layer are changed in the nanostructures of vanadium oxides through pulsed hydrogen plasma (PHP). The thickness‐dependent variations are also observed with Raman and X‐ray photoelectron spectroscopy (XPS), and verified in vanadium oxides with different oxidation states. Obvious modulations on IMT behaviors are then demonstrated and related to such variation of surface oxidation states in the VO2 thin film and nanobeam. It is expected that such surface manipulations are beneficial to a better understanding of the IMT in correlated vanadium oxides and the fabrication of advanced functional electronic and photoelectronic devices.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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