Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review
Author:
Affiliation:
1. EEE Department RVR & JC CE Chowdavaram, Guntur Andhra Pradesh India
2. EEE Department VNR VJIET Hyderabad Telangana State India
3. EEE Department VLITS Vadlamudi Andhra Pradesh India
4. EEE Department VRSEC Vijayawada Andhra Pradesh India
Publisher
Wiley
Subject
Energy Engineering and Power Technology,Fuel Technology,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/er.6683
Reference170 articles.
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3. Garrido‐DiezD BaraiaI.Review of wide bandgap materials and their impact in new power devices. Paper presented at: 2017 IEEE International Workshop of Electronics Control Measurement Signals and their Application to Mechatronics (ECMSM) Donostia‐San Sebastian; 2017. pp. 1‐6.
4. Growth of bulk GaN crystals
5. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process
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