High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration-Reference-Cited by-同舟云学术

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

Published:2021-02-07 Issue:4 Volume:2 Page:2000067
ISSN:2699-9293
Container-title:Advanced Photonics Research
language:en
Short-container-title:Adv Photo Res

Author:

Mukhopadhyay Partha¹^ORCID,Hatipoglu Isa¹^ORCID,Sakthivel Tamil Selvan²^ORCID,Hunter Daniel A.³,Edwards Paul R.³^ORCID,Martin Robert W.³^ORCID,Naresh-Kumar Gunasekar³^ORCID,Seal Sudipta²⁴⁵^ORCID,Schoenfeld Winston V.¹²⁶^ORCID

Affiliation:

1. CREOL The College of Optics and Photonics University of Central Florida 4000 Central Florida Blvd Orlando FL 32816 USA

2. Department of Material Science and Engineering University of Central Florida 4000 Central Florida Blvd Orlando FL 32816 USA

3. Department of Physics SUPA University of Strathclyde Glasgow G4 0NG UK

4. NanoScience Technology Center University of Central Florida 4000 Central Florida Blvd Orlando FL 32816 USA

5. College of Medicine University of Central Florida 4000 Central Florida Blvd Orlando FL 32816 USA

6. Department of Electrical and Computer Engineering University of Central Florida 4000 Central Florida Blvd Orlando FL 32816 USA

Funder

National Science Foundation

Engineering and Physical Sciences Research Council

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adpr.202000067

Reference42 articles.

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2. A review of Ga2O3materials, processing, and devices

3. X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

4. Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

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