An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices
Author:
Affiliation:
1. Centre de Développement des Technologies Avancées; Cité 20 aout 1956 Baba Hassen, Alger Algéria
2. EECS, University of Ottawa; 800 King Edward, Ottawa Ontario K1N 6N5 Canada
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
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3. An approach to determining an equivalent circuit for HEMTs;Shirakawa;IEEE Trans Microw Theory Tech.,1995
4. An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances;Burm;IEEE Trans Electron Device.,1997
5. A new small signal model parameter extraction method applied to GaN devices;Jarndal;IEEE Trans Microw Theory Tech.,2005
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