Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model-Reference-Cited by-同舟云学术

Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model

Published:2006 Issue:3 Volume:19 Page:229-238
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Li Szu-Ju,Chang Chia-Cherng,Tsai Yao-Tsung

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference16 articles.

1. A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

2. A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures

3. , , . Quantum effects in Si n-MOS inversion layer with simple numerical method. Proceedings of the Electron Devices and Materials Symposium (EDMS), 2003; 662–665.

4. A versatile impedance boundary method of moments computational technique for solving the one-dimensional Schrodinger equation with application to quantum well and quantum wire problems

5. Variational calculations on a quantum well in an electric field

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor;Acta Physica Sinica;2016

2. Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor;Acta Physica Sinica;2014

3. Kronig–Penney model simulation with equivalent circuit method;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2007