A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures-Reference-Cited by-同舟云学术

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A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures

Published:1990 Issue:11 Volume:9 Page:1217-1224
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Takano C.,Yu Z.,Dutton R.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx1/43/2288/00062759.pdf?arnumber=62759

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge storage in SnO2 nanoparticles: A method and mechanism for charge writing/erasing;Applied Physics Letters;2007-10-15

2. Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2006

3. On the significance of the surface states in isolated AlxGa1−xN/GaN heterostructures;Solid-State Electronics;2005-04

4. Quantum mechanics prescriptions for compound-semiconductor transistor technologies;Solid-State Electronics;2001-07

5. Polarization fields determination in AlGaN/GaN heterostructure field-effect transistors from charge control analysis;Applied Physics Letters;1999-10-18

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