Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor

Abstract

Within the framework of k p perturbation theory, models of the hole quantization and conductivity effective mass for the inversion layer in uniaxially tensile/compressive and Si-based baixially strained p-channel metal-oxid-semiconductor (PMOS) have been established. Results show that: 1) uniaxially compressive technique should be chosen for the carrier mobility enhancement in uniaxially strained PMOS; 2) the magnitude of uniaxial stress will be less than that of the biaxial case to improve PMOS performance using strained technique; 3) strained Si1-xGex is preferred to use instead of using strained Si, when we choose the biaxially strained materials for the PMOS channel. Our results can provide valuable references to Si-based and other strained device and materials design.