Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867935
Reference19 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
3. NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures
4. Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain
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