New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon-Reference-Cited by-同舟云学术

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New Approach to the ALD of Bismuth Silicates; Bi(CH2SiMe3)3 Acting as a Precursor for both Bismuth and Silicon

Published:2005-09 Issue:8-9 Volume:11 Page:362-367
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Harjuoja J.,Hatanpää T.,Vehkamäki M.,Väyrynen S.,Putkonen M.,Niinistö L.,Ritala M.,Leskelä M.,Rauhala E.

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Reference35 articles.

1. Preparation of Bi4Ti3O12Thin Film on Si(100) Substrate Using Bi2SiO5Buffer Layer and Its Electric Characterization

2. M. Yamaguchi, K. Hiraki, T. Homma, T. Nagatomo, Y. Masuda, IEEE Int. Symp. Appl. Ferroelectrics 2001, p. 629.

3. New low temperature preparation of ferroelectric Bi4Ti3O12 thin films by MOCVD method

4. Preparation of Bi4Ti3O12Thin Films by MOCVD Method and Electrical Properties of Metal/Ferroelectric/Insulator/Semiconductor Structure

5. Preparation of Bi4Ti3O12/Bi2SiO5/Si Structures Derived by Metal Organic Decomposition Technique

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