Gate‐Deterministic Remote Doping Enables Highly Retentive Graphene‐MXene Hybrid Memory Devices on Plastic-Reference-Cited by-同舟云学术

Gate‐Deterministic Remote Doping Enables Highly Retentive Graphene‐MXene Hybrid Memory Devices on Plastic

Author:

Kim Seongchan¹^ORCID,Jo Sae Byeok²,Kim Jihyun³,Rhee Dongjoon³,Choi Yoon Young⁴,Kim Do Hwan⁵,Kang Joohoon³,Cho Jeong Ho⁴^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

2. School of Chemical Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

3. School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

4. Department of Chemical and Biomolecular Engineering Yonsei University Seoul 03722 Republic of Korea

5. Department of Chemical Engineering Hanyang University Seoul 04763 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

Reference44 articles.

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