Defect-Engineered Semiconducting van der Waals Thin Film at Metal–Semiconductor Interface of Field-Effect Transistors-Reference-Cited by-同舟云学术

Defect-Engineered Semiconducting van der Waals Thin Film at Metal–Semiconductor Interface of Field-Effect Transistors

Published:2023-12-15 Issue:1 Volume:18 Page:1073-1083
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Jihyun¹^ORCID,Rhee Dongjoon¹²,Jung Myeongjin¹²,Cheon Gang Jin¹,Kim Kangsan¹,Kim Jae Hyung¹,Park Ji Yun¹,Yoon Jiyong³,Lim Dong Un⁴,Cho Jeong Ho⁴^ORCID,Kim In Soo⁵⁶^ORCID,Son Donghee³⁵⁶^ORCID,Jariwala Deep²^ORCID,Kang Joohoon¹⁵⁶^ORCID

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

2. Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States

3. Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

4. Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea

5. Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea

6. KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c10453

Reference39 articles.

1. Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

2. Ultralow contact resistance between semimetal and monolayer semiconductors

3. Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

4. One-dimensional semimetal contacts to two-dimensional semiconductors

5. Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length