Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors-Reference-Cited by-同舟云学术

Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Published:2021-10-20 Issue:6 Volume:32 Page:2109254
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Liu Hai‐Yang¹²,Yin Jun¹³,Gao Xiangxiang¹,Zhao Sanchuan¹,Bian Gang¹,Li Jiaye¹,Wang Chao‐Peng¹,Zhu Jian¹^ORCID

Affiliation:

1. School of Materials Science and Engineering National Institute for Advanced Materials Nankai University Tianjin 300350 P. R. China

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon‐based Electronics Department of Electronics Peking University Beijing 100871 P. R. China

3. Tianjin Key Laboratory for Rare Earth Materials and Applications Nankai University Tianjin 300350 P. R. China

Funder

Tianjin Science and Technology Committee

Fundamental Research Funds for the Central Universities

Higher Education Discipline Innovation Project

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202109254

Reference41 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. A III–V nanowire channel on silicon for high-performance vertical transistors

3. Doping-Less Tunnel Field Effect Transistor: Design and Investigation

4. Carbon nanotube transistors scaled to a 40-nanometer footprint

5. Scaling carbon nanotube complementary transistors to 5-nm gate lengths

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