Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Author:

Dasika Pushkar1ORCID,Samantaray Debadarshini2ORCID,Murali Krishna1ORCID,Abraham Nithin1ORCID,Watanbe Kenji3ORCID,Taniguchi Takashi4ORCID,Ravishankar N2,Majumdar Kausik1ORCID

Affiliation:

1. Department of Electrical Communication Engineering Indian Institute of Science Bangalore 560012 India

2. Materials Research Center Indian Institute of Science Bangalore 560012 India

3. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐044 Japan

4. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐044 Japan

Funder

Indian Space Research Organisation

Ministry of Human Resource Development

Science and Engineering Research Board

Ministry of Electronics and Information technology

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

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