Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire-Reference-Cited by-同舟云学术

Contact‐Barrier Free, High Mobility, Dual‐Gated Junctionless Transistor Using Tellurium Nanowire

Published:2021-01-15 Issue:13 Volume:31 Page:2006278
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Dasika Pushkar¹^ORCID,Samantaray Debadarshini²^ORCID,Murali Krishna¹^ORCID,Abraham Nithin¹^ORCID,Watanbe Kenji³^ORCID,Taniguchi Takashi⁴^ORCID,Ravishankar N²,Majumdar Kausik¹^ORCID

Affiliation:

1. Department of Electrical Communication Engineering Indian Institute of Science Bangalore 560012 India

2. Materials Research Center Indian Institute of Science Bangalore 560012 India

3. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐044 Japan

4. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐044 Japan

Funder

Indian Space Research Organisation

Ministry of Human Resource Development

Science and Engineering Research Board

Ministry of Electronics and Information technology

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202006278

Reference52 articles.

1. High Performance Silicon Nanowire Field Effect Transistors

2. High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

3. Toward Nanowire Electronics

4. Considerations for Ultimate CMOS Scaling

5. CMOS Scaling Trends and Beyond

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