Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors-Reference-Cited by-同舟云学术

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Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors

Published:2023-08-16 Issue:9 Volume:5 Page:4816-4825
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lim Seung-Hyun¹^ORCID,Kim Tae In²^ORCID,Park Ick-Joon³^ORCID,Kwon Hyuck-In¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea

2. Department of Electrical Engineering, Inha University, Incheon 22212, Korea

3. Department of Electrical and Electronic Engineering, Joongbu University, Goyang 10279, Korea

Funder

Inha University

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00620

Reference54 articles.

1. Graphene: Status and Prospects

2. Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

3. Self-Aligned Contact Doping of WSe₂ Metal–Insulator–Semiconductor Field-Effect Transistors Using Hydrogen Silsesquioxane

4. Engineering Exciton Recombination Pathways in Bilayer WSe₂ for Bright Luminescence

5. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

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1. Surface crystallization effects on tellurium oxide thin films for low-power complementary logic circuit applications;Applied Surface Science;2024-10

2. A Perspective on tellurium-based optoelectronics;Applied Physics Letters;2024-08-12

3. Synthesis and Characterization of a Semiconductor Diodic Bilayer PbS/CdS Made by the Chemical Bath Deposition Technique;ACS Omega;2024-05-28

4. Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer;ACS Applied Materials & Interfaces;2024-04-26

5. A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures;ACS Applied Materials & Interfaces;2024-04-09

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