Studies on electron beam evaporated ZrO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

Studies on electron beam evaporated ZrO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Published:2005-01 Issue:2 Volume:202 Page:R16-R18
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Balachander Krishnan,Arulkumaran Subramaniam,Ishikawa Hiroyasu,Baskar Krishnan,Egawa Takashi

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, Technical Digest of IEDM (Washington DC, 8-10 Dec. 2003), p. 983.

2. Low-frequency noise in AlGaN/GaN MOS-HFETs

3. Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

4. Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes

5. Maximum current in nitride-based heterostructure field-effect transistors

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