Low-frequency noise in AlGaN/GaN MOS-HFETs-Reference-Cited by-同舟云学术

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Low-frequency noise in AlGaN/GaN MOS-HFETs

Published:2000 Issue:3 Volume:36 Page:268
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Pala N.,Gaska R.,Rumyantsev S.,Shur M.S.,Asif Khan M.,Hu X.,Simin G.,Yang J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20000171?crawler=true&mimetype=application/pdf

Reference10 articles.

1. AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

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1. Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures;Materials;2020-09-17

2. Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions;Crystals;2020-09-17

3. Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation;IEEE Transactions on Electron Devices;2020-08

4. Comparison for 1/ ${f}$ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET;IEEE Transactions on Electron Devices;2017-09

5. (Invited) New Approaches for Shrinking the Performance Gap for GaN Power Devices;ECS Transactions;2017-08-17

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