Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films-Reference-Cited by-同舟云学术

Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Published:2020-01-17 Issue:4 Volume:2 Page:769-774
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Napari Mari¹^ORCID,Huq Tahmida N.¹,Maity Tuhin¹,Gomersall Daisy²,Niang Kham M.²,Barthel Armin¹,Thompson Juliet E.¹,Kinnunen Sami³,Arstila Kai³,Sajavaara Timo³,Hoye Robert L. Z.¹,Flewitt Andrew J.²,MacManus‐Driscoll Judith L.¹

Affiliation:

1. Department of Materials Science and MetallurgyUniversity of Cambridge Cambridge UK

2. Electrical Engineering Division, Department of EngineeringUniversity of Cambridge Cambridge UK

3. Department of PhysicsUniversity of Jyväskylä Jyväskylä Finland

Funder

Engineering and Physical Sciences Research Council

European Commission

Isaac Newton Trust

Royal Academy of Engineering

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12076

Reference35 articles.

1. Electrical Properties of Non-Stoichiometric Nickel Oxide

2. Thermodynamic and Transport Properties of Stoichiometric and Nonstoichiometric Nickel Oxide

3. Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

4. Effects of Processing Conditions on the Work Function and Energy-Level Alignment of NiO Thin Films

5. Functionalized Nickel Oxide Hole Contact Layers: Work Function versus Conductivity

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