Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance
Author:
Affiliation:
1. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931751
Reference44 articles.
1. Reproducible resistance switching in polycrystalline NiO films
2. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
3. Metal–Oxide RRAM
4. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
5. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V
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