Point‐Arc Remote Plasma Chemical Vapor Deposition for High‐Quality Single‐Crystal Diamond Selective Growth-Reference-Cited by-同舟云学术

Point‐Arc Remote Plasma Chemical Vapor Deposition for High‐Quality Single‐Crystal Diamond Selective Growth

Published:2019-07-22 Issue:21 Volume:216 Page:1900227
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Fei Wenxi¹^ORCID,Inaba Masafumi²,Hoshino Haruka¹,Tsuyusaki Ikuto¹,Kawai Sora¹,Iwataki Masayuki¹,Kawarada Hiroshi¹³

Affiliation:

1. School of Science and EngineeringWaseda University 3-4-1 Okubo Tokyo 169-8555 Japan

2. Institute of Materials and Systems for SustainabilityNagoya University Furo-cho, Chikusa Nagoya 464-8603 Japan

3. Kagami Memorial Laboratory for Materials Science and TechnologyWaseda University 2-8-26 Nishiwaseda Tokyo 169-0051 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900227

Reference29 articles.

1. Chemical vapor deposition of homoepitaxial diamond films

2. Selective Homoepitaxy of Diamond Thin Films and Investigation of Their Cathodoluminescence

3. Growth of high-quality homoepitaxial CVD diamond films at high growth rate

4. Submicron-scale diamond selective-area growth by hot-filament chemical vapor deposition

5. Superconductivity in nano- and micro-patterned high quality single crystalline boron-doped diamond films

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