Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator
Author:
Affiliation:
1. School of Science and Engineering, Waseda University, 3-4-1 Okubo, Tokyo, Japan
2. Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Tokyo, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5143982
Reference36 articles.
1. Hydrogen-terminated diamond surfaces and interfaces
2. Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope
3. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements
4. An insight into the mechanism of surface conductivity in thin film diamond
5. High-preformance diamond surface-channel field-effect transistors and their operation mechanism
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