C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability

Author:

Bi TeORCID,Chang Yuhao,Fei Wenxi,Iwataki Masayuki,Morishita Aoi,Fu Yu,Niikura Naoya,Kawarada Hiroshi

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference31 articles.

1. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds;Kawarada;Appl. Phys. Lett.,1994

2. Progress toward diamond power field-effect transistors;Geis;Phys. Status Solidi Appl. Mater. Sci.,2018

3. C-H surface diamond field effect transistors for high temperature (400°C) and high voltage (500V) operation;Kawarada;Appl. Phys. Lett.,2014

4. Thermally stable operation of h-terminated diamond FETs by NO2 adsorption and Al2O3 passivation;Hirama;IEEE Electron. Device Lett.,2012

5. Polycrystalline diamond MOSFET with MoO3 gate dielectric and passivation layer;Ren;IEEE Electron. Device Lett.,2017

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