C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability
Author:
Publisher
Elsevier BV
Subject
General Chemistry,General Materials Science
Reference31 articles.
1. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds;Kawarada;Appl. Phys. Lett.,1994
2. Progress toward diamond power field-effect transistors;Geis;Phys. Status Solidi Appl. Mater. Sci.,2018
3. C-H surface diamond field effect transistors for high temperature (400°C) and high voltage (500V) operation;Kawarada;Appl. Phys. Lett.,2014
4. Thermally stable operation of h-terminated diamond FETs by NO2 adsorption and Al2O3 passivation;Hirama;IEEE Electron. Device Lett.,2012
5. Polycrystalline diamond MOSFET with MoO3 gate dielectric and passivation layer;Ren;IEEE Electron. Device Lett.,2017
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer;IEEE Transactions on Electron Devices;2024-01
2. High Conductivity Hydrogenated Boron and Silicon Co-Doped Diamond With 0.46 Ω·mm Ohmic Contact Resistance;IEEE Electron Device Letters;2024-01
3. Oxidized-Silicon-Terminated Diamond p-FETs With SiO2-Filling Shallow Trench Isolation Structures;IEEE Electron Device Letters;2023-11
4. Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric;IEEE Transactions on Electron Devices;2023-11
5. Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel;Carbon;2023-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3