High temperature operation of logic AND gate based on diamond Schottky diodes fabricated by selective growth method

Author:

Liu Benjian,Zhang SenORCID,Ralchenko Viktor,Wen Dongyue,Zhang XiaohuiORCID,Xue Jingjing,Qiao Pengfei,Wang Weihua,Zhao Jiwen,Cao Wenxin,Dai Bing,Liu Kang,Han Jiecai,Zhu JiaqiORCID

Funder

Fundamental Research Funds for the Central Universities

National Key Research and Development Program of China Stem Cell and Translational Research

Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Ministry of Education

Heilongjiang Provincial Postdoctoral Science Foundation

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference50 articles.

1. Diamond: carbon at its best;Nebel;Carbon N. Y.,2021

2. Thermal conductivity of diamond mosaic crystals grown by chemical vapor deposition: thermal resistance of junctions;Ralchenko;Phys. Rev. Appl.,2021

3. High carrier mobility in ultrapure diamond measured by time-resolved cyclotron resonance;Akimoto;Appl. Phys. Lett.,2014

4. Blocking characteristics of diamond junctions with a punch-through design;Hiraiwa;J. Appl. Phys.,2015

5. 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity;Imanishi;IEEE Electron. Device Lett.,2019

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