Oxygen Vacancy Mediated Stabilization of Cubic Phase at Room Temperature and Resistive Switching Effect in Sm‐ and Dy‐Doped HfO 2 Thin Film-Reference-Cited by-同舟云学术

Oxygen Vacancy Mediated Stabilization of Cubic Phase at Room Temperature and Resistive Switching Effect in Sm‐ and Dy‐Doped HfO 2 Thin Film

Published:2019-12-13 Issue:1 Volume:217 Page:1900756
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kumar Sandeep¹,Rath Chandana¹^ORCID

Affiliation:

1. School of Materials Science and TechnologyIndian Institute of TechnologyBanaras Hindu University Varanasi 221005 India

Funder

University Grants Commission

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900756

Reference25 articles.

1. Proposed Phase Relations in the HfO2-Rich Portion of the System Hf-HfO2

2. The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. A Forming-Free Bipolar Resistive Switching in HfO x -Based Memory with a Thin Ti Cap

5. Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures

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