A Forming-Free Bipolar Resistive Switching in HfO x -Based Memory with a Thin Ti Cap
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/10/107303/pdf
Reference23 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Resistive switching in transition metal oxides
3. $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity
4. Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions
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