Thickness dependent phase transformation and resistive switching performance of HfO2 thin films-Reference-Cited by-同舟云学术

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Thickness dependent phase transformation and resistive switching performance of HfO2 thin films

Published:2024-03 Issue: Volume:315 Page:129035
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Dehury Taranga^ORCID,Kumar Sandeep^ORCID,Kumar Sinha Akhoury Sudhir,Gupta Mukul,Rath Chandana^ORCID

Publisher

Elsevier BV

Reference46 articles.

1. Redox‐based resistive switching memories Nanoionic mechanisms prospects and challenges;Rainer;Adv. Mater.,2009

2. The missing memristor found;Strukov;Nature,2008

3. Low‐temperature‐grown transition metal oxide based storage materials and oxide;Lee;Adv. Funct. Mater.,2009

4. Bipolar resistive switching in TiO2 artificial synapse mimicking pavlov's associative learning;Jena;ACS Appl. Mater. Interfaces,2022

5. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R Rep.,2014

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inexpensive fabrication of radiation shielding and hydrophobic hafnium dioxide thin films for electronic, photonic and optoelectronic applications;Journal of Optics;2024-09-06

2. Processing of hafnium oxide thin films by 2 MeV Kr ion beam for opto-electronic applications;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09

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