Inexpensive fabrication of radiation shielding and hydrophobic hafnium dioxide thin films for electronic, photonic and optoelectronic applications
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s12596-024-02202-4.pdf
Reference21 articles.
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3. Y. Yang, Z. Xu, T. Qiu et al., High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor. Org. Electron. 101, 106413 (2022). https://doi.org/10.1016/j.orgel.2021.106413
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5. P.M. Tirmali, A.G. Khairnar, B.N. Joshi, A.M. Mahajan, Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors. Solid State Electron. 62(1), 44–47 (2011). https://doi.org/10.1016/j.sse.2011.04.009
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