Correlation of on-wafer 400 V dynamic behavior and trap characteristics of GaN-HEMTs-Reference-Cited by-同舟云学术

Correlation of on-wafer 400 V dynamic behavior and trap characteristics of GaN-HEMTs

Published:2014-02-19 Issue:4 Volume:211 Page:779-783
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Imada T.¹,Piedra D.²,Kikkawa T.¹,Palacios T.²

Affiliation:

1. Fujitsu Laboratories Ltd.; 10-1 Morinosato-Wakamiya 243-0197 Atsugi Japan

2. Massachusetts Institute of Technology; 77 Massachusetts Ave. Cambridge MA 02139 USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. T. Imada M. Kanamura T. Kikkawa 1027 1033

2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

3. B. Lu T. Palacios D. Risbud S. Bahl D. I. Anderson 1 4

4. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

5. Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

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