Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs-Reference-Cited by-同舟云学术

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Published:2007-09 Issue:9-11 Volume:47 Page:1639-1642
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Faqir M.,Verzellesi G.,Fantini F.,Danesin F.,Rampazzo F.,Meneghesso G.,Zanoni E.,Cavallini A.,Castaldini A.,Labat N.,Touboul A.,Dua C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs;Meneghesso;IEEE Trans Electron Dev,2006

2. Joh J, del Alamo J. Mechanisms for electrical degradation of GaN high-electron mobility transistors. IEDM Tech. Digest; 2006.

3. Sozza A, et al. Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000h on-state and off-state hot-electron stress. IEDM Tech. Digest; 2005.

4. Surface influence on the conductance DLTS spectra of GaAs MESFET’s;Blight;IEEE Trans Electron Dev,1986

5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFET’s;Vetury;IEEE Trans Electron Dev,2001

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