Study of InAlGaN/GaN HEMT structures by DLTFS with optical excitation
Author:
Affiliation:
1. Institute of Electronics and Photonics, Slovak University of Technology in Bratislava,Bratislava,Slovakia,812 19
Funder
ECSEL JU
Slovak Research and Development Agency
Ministry of Education, Science, Research and Sport of Slovakia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9966729/9966739/09966764.pdf?arnumber=9966764
Reference11 articles.
1. Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2. Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
3. Review—Ionizing Radiation Damage Effects on GaN Devices
4. Photo-Excited DLTS: Measurement of Minority Carrier Traps
5. Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs
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