Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance-Reference-Cited by-同舟云学术

Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Published:2015-11 Issue:6 Volume:33 Page:061203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Polyakov Alexander Y.¹,Smirnov Nikolai B.²,Lee In-Hwan³,Pearton Stephen J.⁴

Affiliation:

1. National University of Science and Technology MISiS, Moscow 119049, Leninsky Ave. 4, Russia

2. National University of Science and Technology MISiS, Moscow 119049, Leninsky Ave. 4, Russia and Institute of Rare Metals, Moscow 119017, B. Tolmachevsky, 5, Russia

3. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756, Korea

4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Funder

Directorate for Engineering (ENG)

Ministry of Education and Science of the Russian Federation

National Research Foundation of Korea (NRF)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4932013

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