Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture-Reference-Cited by-同舟云学术

Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture

Published:2017 Issue:11 Volume:6 Page:S3034-S3039
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Polyakov A. Y.,Smirnov N. B.,Shchemerov I. V.,Ren Fan,Pearton S. J.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

2. Meneghini Matteo Meneghesso Gaudenzio Zanoni Enrico , Trapping and Degradation Mechanisms in GaN-Based HEMTs, in Gallium Nitride (GaN) Physics, Devices, and Technology, Medjdoub Farid Iniewski Krzysztof , (eds) (CRC Press, Boca Raton, 2013) chapter 10.

3. Deep traps in GaN-based structures as affecting the performance of GaN devices

4. Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

5. Next generation defect characterization in nitride HEMTs

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