Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2thin films-Reference-Cited by-同舟云学术

Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2thin films

Published:2015-01-21 Issue:4 Volume:212 Page:751-766
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kärkkänen Irina¹,Shkabko Andrey¹,Heikkilä Mikko²,Vehkamäki Marko²,Niinistö Jaakko²,Aslam Nabeel¹,Meuffels Paul¹,Ritala Mikko²,Leskelä Markku²,Waser Rainer¹,Hoffmann-Eifert Susanne¹

Affiliation:

1. Peter Gr; ü; nberg Institut and JARA-FIT; Forschungszentrum Jülich; Leo-Brandt Strasse 52425 Jülich Germany

2. Laboratory of Inorganic Chemistry; University of Helsinki; P. O. Box 55 Helsinki 00014 Finland

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference77 articles.

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2. Atomic Layer Deposition of High-kOxides of the Group 4 Metals for Memory Applications

3. High-performance imido–amido precursor for the atomic layer deposition of Ta2O5

4. Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

5. Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories

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