On origin of resistive and capacitive contributions to impedance of memory states in Cu/TiO2/Pt RRAM devices by impedance spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
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5. Investigations on RF sputtered TiN thin films and Cu/TiO2/TiN devices for resistive switching memory applications;Journal of Materials Science: Materials in Electronics;2023-09
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