Low power high speed 3-bit multilevel resistive switching in TiO2 thin film using oxidisable electrode
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6463/ab7acb/pdf
Reference38 articles.
1. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
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