Analysis of Oxide Capacitance Changes Based on the Formation-Annihilation of Conducting Filament in Sio2/Si-Ncs/Sio2 Stack Layer-Based Mis-Like Capacitor-Reference-Cited by-同舟云学术

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Analysis of Oxide Capacitance Changes Based on the Formation-Annihilation of Conducting Filament in Sio2/Si-Ncs/Sio2 Stack Layer-Based Mis-Like Capacitor

Published:2024 Issue: Volume: Page:
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Author:

Germán Martínez Jesús Miguel,González Flores Karla,Palacios Márquez Braulio,Mendoza Ramirez Carolina,Moreno Moreno Mario,Morales Sanchez Alfredo

Publisher

Elsevier BV

Reference38 articles.

1. Beyond the silicon roadmap;Neil Mathur;Nature,2002

2. Resistive switching in transition metal oxides;Akihito Sawa;Materials today,2008

3. Quantized conductance atomic switch;Kazuya Terabe;Nature,2005

4. Memristor-the missing circuit element;Leon Chua;IEEE Transactions on circuit theory,1971

5. The missing memristor found;Dmitri B Strukov;nature,2008

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