Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells-Reference-Cited by-同舟云学术

Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells

Published:2012-12-17 Issue:3 Volume:210 Page:559-562
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Si Zhao,Wei Tongbo,Yan Jianchang,Ma Jun,Zhang Ning,Liu Zhe,Wei Xuecheng,Wang Xiaodong,Lu Hongxi,Wang Junxi,Li Jinmin

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Shallow–Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$ ) Facet GaN

2. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

3. Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

4. Junction Temperature-Controlled Spectrum in a Two-Color InGaN–GaN Quantum-Well Light-Emitting Diode

5. Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes

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