Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs-Reference-Cited by-同舟云学术

Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs

Published:2018-02 Issue: Volume:28 Page:70-74
ISSN:1569-4410
Container-title:Photonics and Nanostructures - Fundamentals and Applications
language:en
Short-container-title:Photonics and Nanostructures - Fundamentals and Applications

Author:

Gorai Anup,Mistry Apu,Panda Siddhartha,Biswas Dipankar

Funder

University of Calcutta

University Grants Commission, India

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Effects of electron concentration on the optical absorption edge of InN;Wu;Appl. Phys. Lett.,2004

2. When group-III nitrides go infrared: new properties and perspectives;Wu;J. Appl. Phys.,2009

3. Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy;Qi;J. Cryst. Growth.,2004

4. Design of a GaN white light-emitting diode through envelope function analysis;Khoshnegar;IEEE J. Quantum Electron.,2010

5. Improved hole distribution in InGaN/GaN dual-wavelength light-emitting diodes with Mg-doped quantum-wells;Si;Phys. Status Solidi A,2013

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Enhancement of Optical Output of InxGa1-xN/GaN Parabolic Quantum Well LEDs, Varying Indium Compositions, and Well Widths;Proceedings of International Conference on Industrial Instrumentation and Control;2022

2. Performance improvement of green QW LEDs, for the different doping in the barriers, using InAlN interlayer and strain compensated AlGaN interlayer at the InGaN/GaN interface;Optical Materials;2021-03

3. Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers;Computers and Devices for Communication;2021

4. InGaN based tunable green light-emitting diodes using InAlN interlayer and strain compensated AlGaN interlayer for better device performance;Optics & Laser Technology;2020-04

5. DFT Calculation on the Electronic Structure and Optical Properties of InxGa1-xN Alloy Semiconductors;Materials Science;2019-12-18