Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-15-8366-7_71
Reference22 articles.
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3. Yang, T.J., Shivaraman, R., Speck, J.S., Wu, Y.R.: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior. J. Appl. Phys. 116, 113104 (2014)
4. Watson-Parris, D., Godfrey, M., Dawson, P., Oliver, R., Galtrey, M., Kappers, M., et al.: Carrier localization mechanisms in In x Ga 1–x N/GaN quantum wells. Phys. Rev. B 83, 115321 (2011)
5. Zhao, H., Jiao, X., Tansu, N.: Analysis of interdiffused InGaN quantum wells for visible light-emitting diodes. J Display Technol 9, 199–205 (2013)
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