Efficiency Improvement of Deep-Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers-Reference-Cited by-同舟云学术

Efficiency Improvement of Deep-Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers

Published:2017-11-24 Issue:10 Volume:215 Page:1700677
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

So Byeongchan¹,Kim Jinwan¹,Shin Eunyoung¹,Kwak Taemyung¹,Kim Taeyoung¹,Nam Okhyun¹^ORCID

Affiliation:

1. Department of Nano-Optical Engineering Convergence Center for Advanced Nano Semiconductor (CANS) Korea Polytechnic University; 237, Sangidaehak-ro, Siheung-si Gyeonggi-do 15073 Republic of Korea

Funder

Fundamental R&D Program for Technology of World Premier Materials

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Advances in group III-nitride-based deep UV light-emitting diode technology

3. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

4. Deep ultraviolet light-emitting diodes

5. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

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