Carrier Confinement in Ultraviolet-C AlGaN Light-Emitting Diodes

Abstract

We have numerically analyzed three different light-emitting diodes (LEDs) namely LED S1, LED S2, and LED S3 in the ultraviolet (UV) region. The band diagram, radiative recombination, and carrier distribution have been studied for LED S2 and LED S3 in comparison to LED S1. Our simulation study has shown that both the proposed structures i.e., LED S2 and LED S3 prove to be better strategies for impeding electron overflow and improving hole inflow. LED S2 and LED S3 have been found to have a reduced efficiency droop at 200 A cm−2 than reference LED S1. Increase in carrier concentration and radiative recombination rate have directly affected the internal quantum efficiency (IQE) of LED S2 and LED S3. The emission spectra of proposed LEDs have increased markedly as compared to LED S1.