Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications-Reference-Cited by-同舟云学术

Single‐Crystal Multilayer Nitride, Metal, and Oxide Structures on Engineered Silicon for New‐Generation Radio Frequency Filter Applications

Published:2020-01-21 Issue:7 Volume:217 Page:1900813
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Dargis Rytis¹^ORCID,Clark Andrew²,Ansari Azadeh³,Hao Zhijian³,Park Mingyo³,Kim DeaGyu³,Yanka Robert¹,Hammond Richard⁴,Debnath Mukul¹,Pelzel Rodney²

Affiliation:

1. IQE NC 494 Gallimore Dairy Rd. Greensboro NC 27407 USA

2. IQE PA 119 Technology Dr. Bethlehem PA 18015 USA

3. School of Computer and Electrical EngineeringGeorgia Institute of Technology North Ave. NW Atlanta GA 30332 USA

4. IQE Si Beach House Cypress Drive St Mellons Cardiff CF3 0LW UK

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900813

Reference45 articles.

1. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering

2. Influence of growth temperature and scandium concentration on piezoelectric response of scandium aluminum nitride alloy thin films

3. Microstructure and piezoelectric response of Y Al1−N thin films

4. Origin of the Anomalous Piezoelectric Response in WurtziteScxAl1−xNAlloys

5. Piezoelectricity of ordered (ScxGa1-xN) alloys from first principles

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al_1‐_xSc_xN Thin Films;Small Methods;2024-08-09

2. High Figure-of-Merit Film Bulk Acoustic Wave Resonator Based on Al_0.87Sc_0.13N Film Prepared Using a Novel Dual-Stage Method;IEEE Electron Device Letters;2024-05

3. Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices;Journal of Applied Physics;2024-04-22

4. Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions;Journal of Applied Physics;2024-04-01

5. Ultrathin Pt and Mo films on Al1–Sc N: an interface investigation;Applied Surface Science;2023-11