Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4 -H2 discharge in the a-Si:H to μc-Si:H transition regime-Reference-Cited by-同舟云学术

Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4 -H2 discharge in the a-Si:H to μc-Si:H transition regime

Published:2016-03-16 Issue:7 Volume:213 Page:1680-1685
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Landheer Kees¹,Goedheer Wim J.²,Poulios Ioannis¹,Schropp Ruud E. I.³,Rath Jatindra K.¹

Affiliation:

1. Faculty of Science; Utrecht University, Debye Institute for Nanomaterials Science - Physics of Devices; High Tech Campus 21 5656 AE Eindhoven The Netherlands

2. FOM Institute DIFFER - Dutch Institute for Fundamental Energy Research; P.O. Box 6336 5600 HH Eindhoven The Netherlands

3. Department of Applied Physics; Plasma and Materials Processing, Eindhoven University of Technology (TU/e); P.O. Box 513 5600 MB Eindhoven The Netherlands

Funder

Dutch Technology Foundation STW

Netherlands Organization for Scientific Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532917/fullpdf

Reference24 articles.

1. Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates

2. Spatial Distribution of SiH3Radicals in RF Silane Plasma

3. Structural properties of a-Si:H related to ion energy distributions in VHF silane deposition plasmas

4. From amorphous to microcrystalline silicon films prepared by hydrogen dilution using the VHF (70 MHz) GD technique

5. Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2discharges

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