Chemical sputtering by H2+ and H3+ ions during silicon deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4960351
Reference42 articles.
1. Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties
2. Damage production ina-Si under low-energy self-atom bombardment
3. Structural properties of a-Si:H related to ion energy distributions in VHF silane deposition plasmas
4. The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition
5. Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4 -H2 discharge in the a-Si:H to μc-Si:H transition regime
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2. Si nanocone structure fabricated by a relatively high-pressure hydrogen plasma in the range of 3.3–27 kPa;Journal of Vacuum Science & Technology B;2022-05
3. Role of H3 + ions in deposition of silicon thin films from SiH4/H2 discharges: modeling and experiments;Plasma Sources Science and Technology;2021-07-01
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5. On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap;Journal of Physics D: Applied Physics;2018-05-24
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