High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure-Reference-Cited by-同舟云学术

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure

Published:2017-05-15 Issue:8 Volume:214 Page:1600726
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kang Myoung-Jin¹,Lee Min-Seong¹,Choi Gwang-Ho¹,Hwang Il-Hwan¹,Cha Ho-Young²,Seo Kwang-Seok¹

Affiliation:

1. Department of Electrical and Computer Engineering, and Inter-University Semiconductor Research Center; Seoul National University; Seoul 151-744 Korea

2. School of Electronic and Electrical Engineering; Hongik University; Seoul 121-791 Korea

Funder

Brain Korea 21 Plus Project

National Research Foundation of Korea

R&D Program

Ministry of Education

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

2. 600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

3. Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

4. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

5. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

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