Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate-Reference-Cited by-同舟云学术

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Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

Published:2022-01 Issue: Volume:161 Page:107064
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Li Jialin,Yin Yian,Zeng Ni,Liao Fengbo,Lian Mengxiao,Zhang Xichen,Zhang Keming,Li Jingbo

Funder

Guangdong Provincial Pearl River Talents Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure[J];Shrestha;IEEE Trans. Electron. Dev.,2019

2. Analytical model for two-dimensional electron gas charge density in recessed-gate GaN high-electron-mobility transistors[J];Sharbati;J. Electron. Mater.,2021

3. Gate injection transistor (GIT)—a normally-off AlGaN/GaN power transistor using conductivity modulation[J];Uemoto;IEEE Trans. Electron. Dev.,2007

4. Polarization doping modulated heterojunction electron gas in Al-GaN/GaN CAVETs[J];Zeng;Semicond. Sci. Technol.,2020

5. Of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: from depletion mode to enhancement mode[J];Control;IEEE Trans. Electron. Dev.,2006

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD Simulation of Novel Recess Gate Common Drain Dual Channel AlGaN/GaN HEMT for Small Signal Performance;IETE Technical Review;2024-04-15

2. Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer;Journal of Electronic Materials;2024-03-05

3. Normally-Off Metal-Insulator-Semiconductor P-GaN gated AlGaN/GaN high electron mobility transistors with low gate leakage current;Journal of Crystal Growth;2023-06

4. Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness;Journal of Materials Science: Materials in Electronics;2023-06

5. Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT;Crystals;2023-01-03

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