Slow de-trapping of minority holes in n-type 4H-SiC epilayers-Reference-Cited by-同舟云学术

Slow de-trapping of minority holes in n-type 4H-SiC epilayers

Published:2011-07-28 Issue:12 Volume:208 Page:2790-2795
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Klein P. B.,Shrivastava A.,Sudarshan T. S.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127260/fullpdf

Reference27 articles.

1. Lifetime-limiting defects in n− 4H-SiC epilayers

2. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

3. Deep levels created by low energy electron irradiation in 4H-SiC

4. Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

5. Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation

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1. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01

2. Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system;Journal of Applied Physics;2020-09-14

3. Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques;Journal of Luminescence;2019-08

4. Surface recombination velocities for n-type 4H-SiC treated by various processes;Journal of Physics D: Applied Physics;2014-07-24

5. Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers;Materials Science Forum;2013-01