Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate-Reference-Cited by-同舟云学术

Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

Published:2017-07-10 Issue:8 Volume:214 Page:1600843
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yamaoka Yuya¹²,Kakamu Ken²,Ubukata Akinori¹,Yano Yoshiki¹,Tabuchi Toshiya¹,Matsumoto Koh¹,Egawa Takashi²

Affiliation:

1. Taiyo Nippon Sanso Corporation; 10 Ohkubo Tsukuba Ibaraki 300-2611 Japan

2. Nagoya Institute of Technology; Gokiso-Cho, Nagoya Aichi, 466-8555 Japan

Funder

Aichi area Super Cluster Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Structural and optical properties of AlxGa1−xN/GaN high electron mobility transistor structures grown on 200 mm diameter Si(111) substrates

2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

3. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

4. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

5. Highly uniform AlGaN/GaN HEMT films grown on 200-mm silicon substrates by plasma molecular beam epitaxy

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