Performance improvement of charge-trap memory by using a stacked Zr0.46Si0.54O2/Al2O3charge-trapping layer-Reference-Cited by-同舟云学术

Performance improvement of charge-trap memory by using a stacked Zr0.46Si0.54O2/Al2O3charge-trapping layer

Published:2016-07-06 Issue:11 Volume:213 Page:3033-3038
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tang Zhenjie¹,Li Rong²,Hu Dan¹,Zhang Xiwei¹,Zhao Yage¹

Affiliation:

1. College of Physics and Electronic Engineering; Anyang Normal University; Anyang 455000 P.R. China

2. School of Mathematics and Statistics; Anyang Normal University; Anyang 455000 P.R. China

Funder

National Natural Science Foundation of China

Science and Technology Develop Project of Henan Province

Science and Technology Research Key Project in Henan Province Department of Education

Science and Technology Project of Anyang

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3nanolaminate∕Al2O3

2. Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

3. Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure

4. Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon Structures

5. Multistacked Al2O3∕HfO2∕SiO2 tunnel layer for high-density nonvolatile memory application

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