High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2∕HfO2–Al2O3nanolaminate∕Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168227
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1. SONOS Device With Tapered Bandgap Nitride Layer
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3. Visualization of electrons and holes localized in gate thin film of metal SiO2–Si3N4–SiO2 semiconductor-type flash memory using scanning nonlinear dielectric microscopy after writing-erasing cycling
4. Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory
5. High-performance nonvolatile HfO/sub 2/ nanocrystal memory
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